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VBL165R22 产品详细

产品简介:

Product introduction:
VBsemi's VBL165R22 is a single N-channel MOSFET with a drain-source voltage (VDS) of up to 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using planar technology and packaged in TO263, it has excellent performance and reliability.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 280m次
- Maximum drain current (ID): 22A
- Technology: Flat
-Package:TO263

领域和模块应用:

Examples of applicable fields and modules:
1. Power module: VBL165R22 can be used in power modules such as switching power supplies, inverters and chargers to achieve high efficiency and reliability.
2. Automotive electronics: In automotive electronic systems, this device can be used in applications such as drive control of electric vehicles and power conversion of charging piles.
3. Industrial automation: suitable for industrial motor drives, frequency converters, industrial control equipment and other fields, providing high-performance power switching solutions.
4. LED lighting: In LED drive circuits, this MOSFET can be used in power factor correction (PFC) circuits and LED drive power supplies to improve efficiency and stability.

These are just some examples, actual application depends on specific design needs and system requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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