MOSFET

您现在的位置 > 首页 > MOSFET

VBL165R15SE 产品详细

产品简介:

Product introduction: VBsemi's VBL165R15SE is a single N-channel power field effect transistor (FET) manufactured using SJ_Deep-Trench technology. Its package is TO263, which has efficient power handling capabilities and stable and reliable performance. Suitable for a variety of application scenarios requiring a single N-channel FET.

文件下载

下载PDF 文档
立即下载

产品参数:

Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V, and threshold voltage (Vth) is 3.5V.
- Current parameters: At VGS=10V, the drain-source resistance (RDSon) is 220m次, and the maximum drain current (ID) is 15A.

领域和模块应用:

Applicable areas and modules:
1. Industrial Electronics: Suitable for high-efficiency industrial power converters, inverters and motor drives.
2. Solar energy and renewable energy: Can be used in energy conversion equipment such as solar inverters, photovoltaic power generation systems and wind power generation devices.
3. Electric vehicles: Motor control and battery management systems for electric vehicles to provide efficient power output.
4. Communication equipment: suitable for high-voltage power management modules in communication base stations, radio frequency power amplifiers and radar systems.
5. Medical equipment: It can be used in high-voltage power supply control modules such as medical imaging equipment, X-ray generators and CT scanners.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询