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VBL165R12 产品详细

产品简介:

Product introduction:
The VBsemi VBL165R12 is a single N-channel power field effect transistor (MOSFET) using Plannar technology for high-performance power electronic applications. The product features a drain-source voltage (VDS) of 650V, a drain current (ID) of 12A, and a gate-source voltage (VGS) of 30V. The package is TO263.

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产品参数:

Detailed parameter description:
- Product model: VBL165R12
- Brand: VBsemi
- Type: Single N-channel power field effect transistor (MOSFET)
- Technology: Plannar
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 800m次
- Drain current (ID): 12A
-Package:TO263

领域和模块应用:

Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power switch module: Due to its high drain-source voltage and drain current capability, it is suitable for power switch modules, such as power inverters, switching power supplies, etc.
2. Electric vehicle drive: It can be used for power switching and current control in electric vehicles, such as inverters and motor controllers in electric vehicle drive systems.
3. Industrial automation equipment: Suitable for power switching and current regulation in industrial automation equipment to improve the operating efficiency and stability of the equipment.
4. Solar inverter: Inverter used in solar photovoltaic systems to convert solar power into AC power to supply household and industrial power systems.

The above are some examples. This product can also be used in other fields and modules that require high-performance power switches.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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