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VBL165R11S 产品详细

产品简介:

Product introduction:
VBL165R11S is a single N-channel field effect transistor launched by the VBsemi brand, packaged in TO263. It features a drain-source voltage (VDS) of up to 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. In addition, its on-resistance is 420mΩ when the gate-source voltage is 10V, and the maximum drain current (ID) is 11A. This product is manufactured using the SJ_Multi-EPI process.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 420m次
- Maximum drain current (ID): 11A
- Manufacturing process: SJ_Multi-EPI
-Package: TO263

领域和模块应用:

Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power inverter module: Due to its high drain-source voltage and low on-resistance, it can be used to design high-efficiency power inverter modules, such as solar inverters and electric vehicle chargers.
2. Automotive electronic modules: In the field of automotive electronics, this product can be used in automotive ignition systems, electric vehicle drives and other modules to achieve high power and high reliability.
3. Industrial automation control system: Suitable for motor control, power management and power transmission modules in the field of industrial automation to improve system performance and stability.
4. LED lighting driver: It can be used as a driver module in LED lighting systems to provide stable power supply and precise current control to achieve high-efficiency lighting solutions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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