产品参数:
**Detailed parameter description:**
- Brand: VBsemi
- Model: VBL165R11
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at gate-source voltage 10V: 800 m次
- Maximum drain current (ID): 11A
- Technology: Plannar
-Package:TO263
领域和模块应用:
**Examples of applicable fields and modules:**
1. **Electric vehicle power module**: VBL165R11 can be used in power management modules of electric vehicles, such as motor controllers, battery management systems, etc. Due to its high voltage and high current characteristics, it can provide reliable power switching functions in electric vehicle systems.
2. **Industrial high-frequency switching power supply**: In industrial high-frequency switching power supply, this type of MOSFET can be used in the power switching circuit of high-frequency switching power supply to achieve efficient power conversion and management. Its low on-resistance and high current characteristics enable it to withstand high-frequency switching operations.
3. **Solar Inverter**: VBL165R11 can be used in the power switching circuit in solar inverters to achieve effective conversion and management of solar energy. Its high withstand voltage and high current characteristics make it suitable for high-voltage environments in solar power generation systems.
4. **Industrial automation equipment**: In industrial automation equipment, this model of MOSFET can be used in various industrial controls and drives, such as PLC controllers, motor controllers, etc. Its high voltage and low on-resistance characteristics allow it to withstand high voltage and current loads in industrial environments.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性