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VBL165R08SE 产品详细

产品简介:

Product Introduction: VBsemi’s VBL165R08SE model is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V . This product is manufactured using SJ_Deep-Trench technology and is packaged as TO263.

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产品参数:

Detailed parameter description:
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 460m次
- Maximum drain current (ID): 8A
- Technology: SJ_Deep-Trench
-Package:TO263

领域和模块应用:

Examples of applicable fields and modules:
- Power module: Suitable for medium-power power modules, such as power inverters and industrial power supplies.
- Automotive electronics: Can be used in power switches in automotive electronic modules, such as on-board chargers and vehicle power control systems.
- Power tools: Suitable for power switch modules in power tools, such as electric drills and electric hammers, to achieve efficient motor drive and control.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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