Product introduction:
VBL165R07S is a single N-type field effect transistor produced by VBsemi brand. It uses SJ_Multi-EPI technology and is packaged as TO263. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 7A. The VBL165R07S product has high performance and reliability and is suitable for a variety of fields and modules.
立即下载
Detailed parameter description:
1. VDS (drain-source voltage): 650V
2. VGS (gate-source voltage): ㊣30V
3. Vth (threshold voltage): 3.5V
4. Drain resistance (m次) when VGS=10V: 700m次
5. ID (drain current): 7A
6. Technology: SJ_Multi-EPI
7. Package: TO263
Examples of applicable fields and modules:
1. Electric vehicle controller: VBL165R07S can be used for current regulation and switch control in electric vehicle controllers to help achieve efficient power output of electric vehicles.
2. Solar inverter: In the solar inverter, this type of transistor can convert DC to AC to ensure efficient and stable operation of the system.
3. Industrial power module: Suitable for switching power supplies in industrial power modules, providing stable power output to meet the power needs of industrial equipment.
4. Automotive electronic systems: In automotive electronic systems, VBL165R07S can be used for power management and circuit protection in the engine control unit (ECU).
The above is an introduction to the VBL165R07S product, detailed parameter descriptions, and examples of applicable fields and modules.
* 如果您对产品有任何问题，请填写表格提交，我们会24小时内回复您
* 如果您需要申请我司样品，请填写表格提交，我们会24小时内回复您
中文
English
返回上级页面
