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VBL1615A 产品详细

产品简介:

The VBL1615A is a single N-type MOSFET with a core voltage (VDS) of 60V, a gate-source voltage range (VGS) of ±20V, and a threshold voltage (Vth) of 2.5V. At a gate-source voltage of 4.5V, the drain-source resistance is 9mΩ; at a gate-source voltage of 10V, the drain-source resistance is 7mΩ. Maximum drain current is 120A. This product is manufactured using Trench technology and is packaged in TO263.

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产品参数:

Product model: VBL1615A
Brand: VBsemi
parameter:
- Type: Single N
- Core voltage (VDS): 60V
- Gate-source voltage range (VGS): ㊣20V
- Threshold voltage (Vth): 2.5V
- Drain-source resistance (m次) at 4.5V gate-source voltage: 9
- Drain-source resistance (m次) at 10V gate-source voltage: 7
- Maximum drain current (ID): 120A
- Technology: Trench
Package: TO263

领域和模块应用:


Application introduction:
1. Electric vehicle battery management system: Since VBL1615A has high drain current and moderate drain-source resistance, it is suitable for battery charge and discharge control in electric vehicle battery management systems. Its high voltage and current provide reliable power output, while its low resistance helps reduce power loss.
2. Power module: In the power module, power switching devices are required to implement power switching and regulation functions. The high voltage and high current characteristics of the VBL1615A make it an ideal choice in power modules, providing stable and reliable power output, and the lower resistance helps improve the efficiency of the power module.
3. Industrial electrical control system: In industrial electrical control systems, power switching devices are required to control the switching and regulation of various electrical equipment. The high voltage and moderate current characteristics of the VBL1615A make it an ideal choice in industrial electrical control systems, capable of providing stable and reliable switching control functions such as motor control and lighting adjustment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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