产品参数:
Product model: VBL1607V3
Brand: VBsemi
parameter:
- MOSFET type: single N-channel
- Maximum drain-source voltage (VDS): 60V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (RDS(on)) at VGS=4.5V: 33m次
- Drain-source resistance (RDS(on)) at VGS=10V: 5m次
- Maximum drain current (ID): 140A
- Technology: Trench technology
-Package: TO263
领域和模块应用:
for example:
1. **Electric vehicle motor drive**: VBL1607V3 can be used to design power switching devices in electric vehicle motor drive systems to achieve efficient energy consumption management and power output control of electric vehicles. Its high drain current and low drain resistance can meet the power needs of electric vehicles when driving at high speeds and climbing hills.
2. **Industrial frequency converter**: In industrial frequency converters, VBL1607V3 can be used as a power switching device to realize speed control and frequency adjustment of the motor. Its high drain current and low drain resistance characteristics improve the efficiency and stability of the frequency converter.
3. **UPS power supply system**: In UPS (uninterruptible power supply) power supply system, VBL1607V3 can be used to design power switch modules to ensure the stability and reliability of power supply. Its high power output and stable characteristics can meet the power output requirements of UPS systems.
4. **Power module**: Among various power modules, VBL1607V3 can be used as a power switching device to achieve stable power supply to electronic equipment. Its high power output and low drain resistance make it an ideal choice in a variety of power modules, improving equipment operating efficiency and reliability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性