产品参数:
parameter:
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 500V
- Gate-source voltage (VGS) (㊣V): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source on-resistance (m次) at VGS=10V: 140m次
- Rated drain current (ID): 30A
- Technology: Multiple Epitaxy Platform (SJ_Multi-EPI)
Package: TO263
领域和模块应用:
Example application:
1. **Electric vehicle power system**:
VBL15R30S is suitable for inverters and drive controllers in electric vehicle power systems. Its high rated drain-source voltage and drain current capabilities make it suitable for use in electric vehicle drivetrains to provide efficient power switching functions.
2. **Industrial high-voltage power module**:
Among industrial high-voltage power modules, VBL15R30S can be used as power switches in high-voltage DC power supplies and power converters. Its high rated drain-source voltage and drain current characteristics make it suitable for industrial control systems and power transmission equipment.
3. **Solar Inverter**:
In solar inverters, VBL15R30S can be used as a power switching element in the inverter circuit. Its high rated drain-source voltage and drain current capabilities make it suitable for high-power solar photovoltaic power generation systems, improving the efficiency and reliability of the inverter.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性