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VBL155R01 产品详细

产品简介:


- This product is a single N-type field effect transistor, suitable for low power applications.
- With higher rated drain-source voltage (VDS) and higher on-resistance, it is suitable for applications requiring higher voltage and low power.
- Technically adopts Plannar structure to improve performance and reliability.

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产品参数:

parameter:
- Type: Single N type
- Rated drain-source voltage (VDS): 550V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 6500
- Maximum drain current (ID): 1A
- Technology: Plannar
Package: TO263

领域和模块应用:

Application Introduction:
- Application areas:
- Low power supply
- signal amplifier
- Control circuit
- Sensor interface
- Low power switching circuit

for example:
1. Low power power module: used for power supply of various small electronic devices, such as portable devices, smart home devices, etc.
2. Signal amplifier module: circuit used for signal amplification and processing, such as audio amplifier, video amplifier, etc.
3. Control circuit module: used in various control circuits, such as motor control, lighting control, etc., to provide reliable switching functions.
4. Sensor interface module: used for the interface circuit between the sensor and the microcontroller to realize the collection and processing of sensor data.
5. Low-power switching circuit module: used in low-power switching circuits, such as power management, signal switching and other applications, to provide stable switching performance.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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