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VBL1303 产品详细

产品简介:

VBL1303 is a single N-type field effect transistor with a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 1.7V. When the gate-source voltage is 4.5V and 10V respectively, the drain-source resistance is 3mΩ and 2mΩ respectively, and the maximum drain current is 98A. This product uses trench technology and is packaged as TO263.

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产品参数:

Product model: VBL1303
Brand: VBsemi
parameter:
- Single N-type field effect transistor
- VDS (drain-source voltage): 30V
- VGS (gate-source voltage): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at VGS=4.5V: 3
- Drain-source resistance (m次) at VGS=10V: 2
- Maximum drain current (ID): 98A
- Technology: Trench
Package: TO263

领域和模块应用:

Application introduction and examples:
VBL1303 is suitable for medium to high power and medium current application scenarios, such as:
1. Power module: VBL1303 can be used as a power switch tube in a switching power supply module for switching control and voltage stabilization of high-performance power supplies. It is suitable for power management of large electronic products such as servers and network equipment.
2. Electric vehicle module: In the power system of electric vehicles, VBL1303 can be used as a power switch in the battery management system to control the charging and discharging process of the battery and protect the safety of the battery and electric vehicles.
3. Industrial control module: In industrial control systems, VBL1303 can be used as the power switch tube of motor drivers to control the start, stop and speed of industrial robots, conveyor belts and other equipment to improve the automation and production efficiency of production lines.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

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