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VBL1206 产品详细

产品简介:

VBL1206 is a single N-type MOSFET with high voltage level and drain current, suitable for circuit modules requiring high power and high performance.

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产品参数:

Product model: VBL1206
Brand: VBsemi
parameter:
- Voltage level (VDS): 20V

- Threshold voltage (Vth): 0.5~1.5V
- On-state resistance VGS=2.5V (m次): 9m次
- On-state resistance VGS=4.5V (m次): 6m次
- Drain current (ID): 85A
- Technology: Trench
Package: TO263

领域和模块应用:

Example:
1. Power inverter module: Because VBL1206 has high voltage level and drain current, it can be used as a power switch in the power inverter module to achieve efficient DC-AC conversion, and is suitable for applications such as household appliances and electric vehicle chargers.

2. Electric vehicle drive module: Its low threshold voltage and on-state resistance enable VBL1206 to achieve fast and stable motor driving in electric vehicle drive modules, and is suitable for applications such as electric vehicle motor controllers and battery management systems.

3. Industrial automation control module: VBL1206’s TO263 package and Trench technology enable it to work stably in high temperature and high pressure environments, and is suitable for motor control, power switching and other functions in industrial automation control modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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