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VBL1201N 产品详细

产品简介:

VBL1201N is a single N-type power field effect transistor launched by the VBsemi brand. It is manufactured using Trench technology and is suitable for various high-voltage and high-power power applications. The products feature high rated drain-source voltage and rated drain current, as well as moderate threshold voltage and drain-source resistance, providing stable and reliable performance.

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产品参数:

parameter:
- Type: Single N type
- Rated drain-source voltage (VDS): 200V
- Nominal gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 4V
- Drain-source resistance (m次) at VGS=10V: 8
- Rated drain current (ID): 100A
- Technology: Trench
Package: TO263

领域和模块应用:


for example:
1. Electric vehicle motor drive module: The high voltage and high current characteristics of VBL1201N make it an ideal choice for electric vehicle motor drive modules, used to control the start and stop, acceleration and braking of the motor to achieve efficient energy conversion and vehicle power. output.
2. Solar inverter: In solar inverter, VBL1201N can be used as a key power switching device to convert solar energy into usable AC power, promote the utilization and development of renewable energy, and achieve efficient use of clean energy.
3. Industrial power supply module: Due to its high voltage and high current capabilities, VBL1201N can be used in industrial power supply modules, such as power converters and high-voltage voltage regulators, to provide stable power output and support the normal operation of industrial equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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