产品简介：
VBsemi's VBL1105 is a Single N-type field effect transistor (FET) with the following key parameters:
- Maximum drain-source voltage (VDS) is 100V, suitable for medium voltage applications.
- The maximum gate-source voltage (VGS) is plus or minus 20V, with high voltage tolerance.
- The gate threshold voltage (Vth) is 3V, indicating that the device has a lower gate voltage.
- The on-resistance at VGS=10V is 4mΩ, showing low on-resistance.
- The maximum drain current (ID) is 140A, with high current handling capability.
- Adopt Trench technology, with good performance and reliability.
- The package is TO263, suitable for surface mount technology.
VBL1105 is suitable for various application fields that require medium voltage, large current and low on-resistance, providing reliable power switching solutions for modules in different fields.
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领域和模块应用：
Application Introduction:
VBL1105 is suitable for a variety of fields and modules, including but not limited to:
1. **Power Module**: Due to its higher current carrying capacity and lower on-resistance, VBL1105 can be used in various power modules such as switching power supplies, inverters and voltage regulators to provide efficient power switching solution.
2. **Electric vehicle charging pile**: This device has moderate voltage tolerance and current carrying capacity, and is suitable for use in power switching circuits in electric vehicle charging piles to provide reliable charging solutions.
3. **Motor drive**: VBL1105 can also be used in power switching circuits in motor drive modules, such as electric vehicle drivers, motor controllers, etc., to provide stable power control and driving capabilities.
4. **Industrial Control**: Due to its stability and reliability, VBL1105 can be used in power switching circuits in industrial control modules, such as PLC and industrial automation equipment, to provide efficient power control and conversion capabilities.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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