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VBKB4265 产品详细

产品简介:

VBsemi's VBKB4265 is a dual P+P power MOSFET that uses Trench technology and has efficient power control capabilities. Its package is SC70-8, which is suitable for circuits and modules that require smaller packaging volume.

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产品参数:

**VBsemi VBKB4265 dual P+P power MOSFET**

**Parameter Description:**
- **Brand:** VBsemi
- **Model:** VBKB4265
- **Package:** SC70-8
- **Dual P+P:** Double P+P type
- **Maximum Drain-Source Voltage (VDS):** -20V
- **Maximum Gate-Source Voltage (VGS):** ㊣20V
- **Threshold Voltage (Vth):** -0.8V
- **On-resistance (m次) when gate-source voltage is 4.5V: ** 98
- **On-resistance (m次) when gate-source voltage is 10V:** 65
- **Maximum Drain Current (ID):** -3.5A
- **Technology:** Trench

领域和模块应用:

**for example:**
1. **Portable Electronic Devices:** Since VBKB4265 has a small SC70-8 package and efficient power control capabilities, it is very suitable for battery management and power control modules in portable electronic devices. For example, charging management modules in portable devices such as smartphones and tablets.

2. **Smart wearable devices:** Smart wearable devices require miniaturization and efficient power management modules to meet the requirements for device volume and energy consumption. VBKB4265 can be used as a power management module in smart wearable devices such as smart watches and smart glasses to achieve battery management and power control.

3. **Sensor interface module:** Many sensors require interface modules for data acquisition and signal processing, and the small package and efficient power control capabilities of VBKB4265 make it very suitable for power switch control in sensor interface modules to achieve control. Efficient management and control of sensors.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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