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VBK362KS 产品详细

产品简介:

VBK362KS is a dual N-type field effect transistor with a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of 20V, and a threshold voltage (Vth) of 1.7V. At the gate - With a source voltage of 10V, it has an on-resistance of 1800mΩ and a maximum drain current (ID) of 0.35A. Manufactured using Trench technology and packaged in SC70-6.
VBK362KS is suitable for a wide range of electronic equipment and systems, including modules such as power management, drivers, signal amplification and power switches, and plays an important role in these fields.

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产品参数:

Product model: VBK362KS
Brand: VBsemi
parameter:
- Structure: Dual N+N
- VDS(V): 60
- VGS(㊣V): 20
-Vth(V)ㄩ1.7
- On-resistance (m次) when VGS=10V: 1800
- ID (A): 0.35
- Technology: Trench
- Package: SC70-6

领域和模块应用:

Examples of application areas:
1. **Power Management Module**: VBK362KS is suitable for power management modules and can be used in applications such as switching power supplies, voltage regulators and power converters. Its high drain-to-source voltage and low on-resistance characteristics enable it to effectively manage and control power output.

2. **Driver module**: In the driver module, VBK362KS can be used as a key component of the drive circuit to control and drive motors, fans and other electric equipment. Its high reliability and stability ensure the normal operation of the system.

3. **Signal amplification module**: Since VBK362KS has low threshold voltage and low on-resistance characteristics, it is suitable for signal amplification modules and can be used to amplify and process various signals, such as audio signals, sensor signals, etc.

4. **Power switch module**: As a key component of the power switch module, VBK362KS can be used to implement the switching function of the circuit, such as power switch control in battery management systems, chargers and inverters.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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