产品参数：
has the following parameters:
The maximum drain-source voltage (VDS) is -100V, the maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -2V.
When the gate-source voltage is 4.5V, the drain-source resistance is 1050m次; when the gate-source voltage is 10V, the drain-source resistance is 1000m次.
Its maximum drain current (ID) is -0.52A, using trench technology (Trench).
This product is packaged in SC70-3.
领域和模块应用：
The VBK2101K transistor is suitable for a variety of fields and modules.
For example, in mobile device modules, it can be used for mobile phone battery management, charging protection and power switches. Due to its small package and low power consumption, this transistor is particularly suitable for power management and power control in portable electronics. In the sensor interface module, it can be used for sensor signal conditioning and data acquisition.
In addition, in medical device modules, it can be used for power management and signal amplification of medical equipment.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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