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VBK1240 产品详细

产品简介:

This product is a single N-type MOSFET. Its main parameters include:
- Maximum drain-source voltage (VDS) is 20V;
- The maximum gate-source voltage (VGS) is plus or minus 20V;
- Threshold voltage (Vth) is between 0.5 and 1.5;
- When the gate-source voltage is 2.5V, the on-resistance (RDS(on)) is 30mΩ;
- When the gate-source voltage is 4.5V, the on-resistance is 26mΩ;
- Maximum drain current (ID) is 5A;
- Made using Trench technology;
- Package is SC70-3.

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产品参数:

Product model: VBK1240
Brand: VBsemi
parameter:
-Single N
- VDS(V): 20
- VGS(㊣V): 20
- Vth(V): 0.5~1.5
- RDS(on) VGS=2.5V(m次): 30
- RDS(on) VGS=4.5V(m次): 26
- ID (A): 5
- Technology: Trench
Package: SC70-3

领域和模块应用:

Application introduction:
This MOSFET is suitable for circuits and modules that require high-performance switching, especially for the following fields and modules:
- Power Management Modules: Due to its low on-resistance and high drain-source voltage, it is suitable for power switches and current regulators in power management modules.
- Automotive electronic modules: Can be used in power switches, motor drivers and LED light controllers in automotive electronic modules.
- Industrial automation module: In industrial automation systems, it can be used for switching power supply, motor control and temperature control modules.
- Communication equipment modules: Suitable for modules such as power amplifiers, radio frequency switches and signal conditioners in communication equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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