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VBJ2208M 产品详细

产品简介:

VBJ2208M is a VBsemi brand single P-type field effect transistor

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产品参数:

The maximum drain-source voltage (VDS) is -200V, the maximum gate-source voltage (VGS) is ㊣30V, and the threshold voltage (Vth) is -3V. When the gate-source voltage is 4.5V, the drain-source resistance is 900m次; when the gate-source voltage is 10V, the drain-source resistance is 800m次. Its maximum drain current (ID) is -2A, and the product is packaged in SOT223.

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VBJ2208M transistor is suitable for a variety of fields and modules. For example, in power management modules it can be used in voltage stabilizers, power switches and power inverters. Due to its high drain-source voltage and low drain-source resistance, this transistor is well suited for power amplification and switching control applications. In electric vehicle electronic modules, it can be used in battery management systems, motor controls and chargers. In addition, in LED driver modules, it can be used for current regulation and lamp bead control. In short, the VBJ2208M transistor has broad application prospects in power management, power control and signal processing modules in industry, automobiles, communications and other fields.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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