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VBJ2202K 产品详细

产品简介:

VBJ2202K is a high-performance single P-type field effect transistor (MOSFET) launched by VBsemi. The device features reliable drain-source and gate-source voltages, as well as low threshold voltage, making it suitable for a variety of power circuit designs. Made with Trench technology, it has good conduction characteristics and stability. The SOT223 package is small and lightweight, suitable for applications with compact space layout. Detailed parameter description and application introduction of VBJ2202K. This product is suitable for multiple fields and modules and can meet the needs of different applications.

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产品参数:

**Product model:** VBJ2202K
**Brand:** VBsemi
**parameter:**
- Power supply type: Single P
- Maximum drain-source voltage (VDS): -200V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (m次) at VGS=4.5V: 2400
- Drain-source resistance (m次) at VGS=10V: 2000
- Maximum drain current (ID): -3A
- Technology: Trench
**Package:** SOT223

领域和模块应用:

**for example:**
1. Power management module: VBJ2202K can be used as a power switch and voltage regulator in the power management module to ensure efficient and stable operation of the power system and reduce power loss.
2. Wireless communication module: In the wireless communication module, VBJ2202K is suitable for power amplifiers and power control circuits to ensure stable signal transmission and low power consumption.
3. Electric vehicle battery management system: Since VBJ2202K has high drain-source resistance and low threshold voltage, it can be used for battery protection and current control in electric vehicle battery management systems to improve battery life and safety.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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