VBJ1695 is a single-channel N-channel field effect transistor with the following main parameters:
- **VDS(V)**: The nominal drain-source voltage is 60V, suitable for medium and low voltage circuit design.
- **VGS(±V)**: The nominal gate-source voltage is ±20V, which has a large voltage tolerance and provides good circuit flexibility.
- **Vth(V)**: The threshold voltage is 1.7V, indicating that the transistor begins to conduct at this voltage, which is suitable for a variety of application scenarios.
- **VGS=4.5V(mΩ)**: According to the standard test conditions, the on-resistance when VGS=4.5V is 85mΩ, and the on-resistance when VGS=10V is 76mΩ, which has high on-resistance and is suitable for low power applications.
- **ID (A)**: Maximum drain current is 4.5A, suitable for low power load applications.
- **Technology**: Made with Trench technology, it has high working stability and reliability.
- **Package**: Using SOT223 package, suitable for compact space layout of low power applications.

VBJ1695 is suitable for application scenarios that require low-power field effect transistors, such as power management modules, sensor modules, LED driver modules and portable electronic products.