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VBJ165R04 产品详细

产品简介:

Detailed product introduction:
VBsemi's VBJ165R04 is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V . It has an on-resistance of 2500mΩ and 2000mΩ at VGS of 4.5V and 10V respectively, and can withstand a maximum drain current (ID) of 4A. It adopts Plannar technology and is packaged as SOT223.

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产品参数:

Parameter Description:
- Model: VBJ165R04
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=4.5V: 2500m次
- On-resistance when VGS=10V: 2000m次
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package: SOT223

领域和模块应用:

Examples of applicable fields and modules:
This product is suitable for the following areas and modules:
1. Small power module: Power control module used for low-power equipment such as household appliances and consumer electronics.
2. Power tools: As power switching components in power tools, such as handheld electric drills, electric scissors, etc.
3. LED lighting control: Power switch control in LED lighting products, such as LED light strips, landscape lighting, etc.
4. Automotive electronics: It has applications in automotive electronic systems, such as vehicle power management, car light control, etc.
5. Smart home equipment: Power control modules used in smart home equipment such as smart sockets and smart switches.

These fields and modules require efficient, miniaturized power switching components to achieve power control and switching functions, and VBJ165R04 is an ideal choice to meet these requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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