产品参数:
Parameter Description:
- Model: VBJ165R04
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=4.5V: 2500m次
- On-resistance when VGS=10V: 2000m次
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package: SOT223
领域和模块应用:
Examples of applicable fields and modules:
This product is suitable for the following areas and modules:
1. Small power module: Power control module used for low-power equipment such as household appliances and consumer electronics.
2. Power tools: As power switching components in power tools, such as handheld electric drills, electric scissors, etc.
3. LED lighting control: Power switch control in LED lighting products, such as LED light strips, landscape lighting, etc.
4. Automotive electronics: It has applications in automotive electronic systems, such as vehicle power management, car light control, etc.
5. Smart home equipment: Power control modules used in smart home equipment such as smart sockets and smart switches.
These fields and modules require efficient, miniaturized power switching components to achieve power control and switching functions, and VBJ165R04 is an ideal choice to meet these requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性