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VBJ1638 产品详细

产品简介:

The VBJ1638 is a single N-type MOSFET with a core voltage (VDS) of 60V, a gate-source voltage range (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. At a gate-source voltage of 4.5V, the drain-source resistance is 33mΩ; at a gate-source voltage of 10V, the drain-source resistance is 28mΩ. Maximum drain current is 7A. This product is manufactured using Trench technology and is packaged in SOT223.

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产品参数:

Product model: VBJ1638
Brand: VBsemi
parameter:
- Type: Single N
- Core voltage (VDS): 60V
- Gate-source voltage range (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at 4.5V gate-source voltage: 33
- Drain-source resistance (m次) at 10V gate-source voltage: 28
- Maximum drain current (ID): 7A
- Technology: Trench
Package: SOT223

领域和模块应用:

Application introduction:
1. Portable electronic equipment: VBJ1638 has low drain current and moderate drain-source resistance, making it suitable for use in power management and power control modules in portable electronic equipment. Its low power consumption and stable and reliable performance make it an ideal choice in portable electronic devices, such as smartphones, tablets, etc.
2. DC-DC converter: In the DC-DC converter, power switching devices are required to achieve voltage up and down conversion. The high voltage and moderate current characteristics of VBJ1638 make it an ideal choice in DC-DC converters, which can provide stable and reliable voltage conversion functions, such as automotive power converters, solar cell converters, etc.
3. LED driver: In LED lighting systems, power switching devices are required to drive the switching and adjustment of LED lights. The low drain current and low resistance characteristics of VBJ1638 make it an ideal choice for LED drivers, enabling stable brightness adjustment and high-efficiency drive control of LED lights.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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