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VBJ125N5K 产品详细

产品简介:

VBJ125N5K is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) produced by VBsemi. The device has the following detailed parameters:

- VDS(V): 250V - Drain-source voltage
- VGS(±V): 20V - Gate-source voltage
- Vth(V): 3V - Threshold voltage
- VGS=10V(mΩ): 1500mΩ - On-resistance when gate-source voltage is 10V
- ID (A): 0.3A - Drain current
- Technology: Trench - Made using trench technology
- Package: SOT223 - SOT223 package form

VBJ125N5K MOSFET is suitable for applications requiring small power, small size and low power characteristics, including small power modules, signal amplifier modules and power management modules.

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产品参数:

Product model: VBJ125N5K
Brand: VBsemi
Parameters: Single N
VDS(V): 250
VGS(㊣V): 20
Vth(V): 3
VGS=10V(m次): 1500
ID(A): 0.3
Technology: Trench
Package: SOT223

领域和模块应用:

VBJ125N5K is suitable for a variety of fields and modules, such as:

1. Small power module: Due to its small SOT223 package and low power characteristics, VBJ125N5K is suitable for small power modules, such as portable devices, smart sensors and low-power electronic products. Its advantages of low on-resistance and trench technology manufacturing enable it to achieve energy saving and efficient energy conversion.

2. Signal amplifier module: This device is suitable for signal amplifier modules such as audio amplifiers, sensor interface circuits and amplifiers. Its low power characteristics and stable performance enable it to work stably in the field of signal amplification and provide clear and stable signal amplification.

3. Power management module: VBJ125N5K is suitable for low-power power management modules, such as low-power DC-DC converters, battery charge management and power switch controllers. Its small package and low power characteristics make it suitable for the needs of small power management systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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