产品参数:
Product model: VBJ1158N
Brand: VBsemi
parameter:
- Single crystal N-channel field effect transistor
- Rated drain-source voltage (VDS): 150V
- Rated gate-source voltage (VGS)(㊣V): ㊣20V
- Threshold voltage (Vth): 2.5V
- Drain-source resistance (m次) at VGS=10V: 60
- Maximum drain current (ID): 6.5A
- Technology: Trench
Package: SOT223
领域和模块应用:
This product is suitable for the following areas and modules:
1. Low power power module:
The VBJ1158N field effect transistor is suitable for low-power power modules such as portable electronic devices and embedded systems. Its SOT223 package and maximum drain current of 6.5A make it suitable for small power converters and battery management systems, providing stable and reliable power supply.
2. LED driver module:
Due to its stability and reliability, VBJ1158N FET is suitable for LED driving modules, such as LED light strips and LED lamps. Its Trench technology and 60mΩ drain-source resistance ensure efficient current transfer and stable power output, making it suitable for drive control of LED lighting systems.
3. Battery protection module:
This product is suitable for low-power battery protection modules such as portable electronic devices and power tools. Its low threshold voltage and maximum drain current of 6.5A provide precise battery management and efficient current control, ensuring the safety and stability of the battery system.
4. Small motor control module:
The VBJ1158N FET is also suitable for small motor control modules, such as electric toys and micro-robots. Its low power characteristics and small package size make it suitable for drive control of small motors, providing stable and reliable current output and efficient energy conversion.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性