产品参数：
**VBI8322**
**Brand:** VBsemi
**parameter:**
- **Single P:** Single P-type field effect transistor
- **VDS(V):** Collector-source voltage: -30V
- **VGS(㊣V):** Gate-source voltage range: ㊣20V
- **Vth(V):** Threshold voltage: -1.7V
- **VGS=4.5V(m次):** Drain-source resistance when gate-source voltage is 4.5V: 26m次
- **VGS=10V(m次):** Drain-source resistance when gate-source voltage is 10V: 22m次
- **ID (A):** Drain current: -6.1A
- **Technology:** Channel process
- **Package:** SOT89-6
领域和模块应用：
**Applicable areas and module examples:**
1. **Automotive electronic module:** VBI8322 can be used in engine control units (ECU) and body control units (BCU) in automotive electronic modules. Its high threshold voltage and low drain-source resistance enable efficient electric vehicle control, improving vehicle performance and energy efficiency.
2. **Industrial Automation Module:** In the industrial automation module, VBI8322 can be used in high-voltage power supplies and switching circuits. Its stable performance and high drain current enable it to reliably drive various industrial equipment, improving production efficiency and safety.
3. **Wireless communication module:** In wireless communication module, VBI8322 can be used in power amplifier and modem circuits. Its low drain-source resistance and moderate drain current enable it to provide stable power output and ensure the transmission quality of communication signals.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
立即下载
中文
English
返回上级页面
