Product introduction:
VBI5325 is a Dual N+P type field effect transistor produced by VBsemi and is suitable for a variety of electronic applications. Features a dual-channel design that enables flexible functionality in the circuit.

Detailed parameter description:
- VDS(V): Maximum drain-source voltage is ±30V.
- VGS(±V): Gate-source voltage range is ±20V.
- Vth(V): The turn-on voltage is 1.6V (N channel) and -1.7V (P channel).
- VGS=4.5V(mΩ): When the gate-source voltage is 4.5V, the drain-source resistance is 24 mΩ (N channel) and 40 mΩ (P channel) respectively.
- VGS=10V(mΩ): When the gate-source voltage is 10V, the drain-source resistance is 18 mΩ (N channel) and 32 mΩ (P channel) respectively.
- ID (A): Maximum drain current is ±8A.
- Technology: Using Trench technology.