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VBI2658 产品详细

产品简介:

VBI2658 is a high-performance single P-type field effect transistor (MOSFET) launched by VBsemi. The device features reliable drain-source and gate-source voltages, as well as low threshold voltage, making it suitable for a variety of power circuit designs. Made with Trench technology, it has good conduction characteristics and stability. The SOT89 package is suitable for small power circuits and has good heat dissipation performance and ease of installation.

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产品参数:

**Product model:** VBI2658
**Brand:** VBsemi
**parameter:**
- Power supply type: Single P
- Maximum drain-source voltage (VDS): -60V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -1.7V
- Drain-source resistance (m次) at VGS=4.5V: 65
- Drain-source resistance (m次) at VGS=10V: 58
- Maximum drain current (ID): -6.5A
- Technology: Trench
**Package:** SOT89

领域和模块应用:

**for example:**
1. Handheld electronic device modules: VBI2658 can be used for power management and power control in handheld electronic device modules, such as smartphones, tablets, etc., to ensure efficient and stable operation of the device and extend battery life.
2. LED drive module: Among the LED drive modules, VBI2658 is suitable for current regulation and drive control of LED light strips and bulbs, providing stable brightness and energy-saving effects.
3. Wireless communication module: Since VBI2658 has lower drain-source resistance and lower threshold voltage, it can be used for power amplification and signal conditioning in wireless communication modules to improve the performance and coverage of communication systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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