产品参数:
VBI2201K is a single-channel P-type MOSFET produced by the VBsemi brand. Its main parameters are as follows: operating voltage VDS is -200V, gate-source voltage VGS is ㊣20V, threshold voltage Vth is -3V, conduction when VGS=4.5V The resistance is 900m次, the on-resistance at VGS=10V is 800m次, and the maximum leakage current ID is -1.8A. It adopts Trench process and is packaged in SOT89.
领域和模块应用:
This product is suitable for various applications requiring P-type MOSFETs, such as:
1. Power management module: In power management, VBI2201K can be used in reverse power switches, power inverters, DC-DC converters, etc. Its high voltage and low on-resistance characteristics make it an ideal choice for these modules. For example, it can be used in power factor correction modules in electric vehicle charging piles.
2. Automotive electronic module: In automotive electronic systems, VBI2201K can be used to drive lighting control modules, electric window control modules, electric door lock control modules, etc. Its high voltage and low on-resistance characteristics make it suitable for high-power applications in automotive circuits, such as DC motor control in electric vehicles.
3. Industrial automation module: In the field of industrial automation, VBI2201K can be used in drive motor modules, sensor interface modules and industrial robot control modules in factory automation systems. Its high withstand voltage and low on-resistance characteristics enable it to withstand high voltages and temperatures in industrial environments and provide reliable performance. For example, it can be used in motor drive modules in industrial robots.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性