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VBI1695 产品详细

产品简介:

VBI1695 is a single N-channel MOSFET suitable for various power circuit applications. It has high rated drain-source voltage and rated drain current, making it suitable for circuit designs requiring higher voltages and currents. In addition, using Trench technology, it has lower gate-source resistance, which can provide higher efficiency and lower conduction loss.

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产品参数:

parameter:
- Structure: Single N
- Rated drain-source voltage (VDS): 60V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Gate-source resistance (VGS=4.5V): 88 m次
- Gate-source resistance (VGS=10V): 76 m次
- Rated drain current (ID): 5.5A
- Technology: Trench
-Package: SOT89

领域和模块应用:

for example:
1. Power module: Since VBI1695 has a high rated drain-source voltage and rated drain current, it is suitable for designing power modules with high stability and strong load capacity, such as switching power supplies, DC-DC converters, etc.
2. Motor drive module: In circuits that need to control motors, VBI1695 can be used as a power switch tube, which can provide stable current output to ensure the normal operation of the motor. For example, the inverter part of the motor control module used in electric vehicles.
3. LED lighting module: As a switching element in the LED drive circuit, VBI1695 can control the brightness and switching of LEDs and is suitable for indoor lighting, automotive lighting and other fields.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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