产品参数:
### Detailed parameter description
- **Type:** Single N MOSFET
- **Maximum drain-source voltage (VDS):** 650V
- **Maximum Gate-Source Voltage (VGS):** ㊣30V
- **Threshold voltage (Vth):** 3.5V
- **Gate-source resistance (RDS(on)) @ VGS=4.5V:** 8000 m次
- **Gate-source resistance (RDS(on)) @ VGS=10V:** 6400 m次
- **Maximum drain current (ID):** 1A
- **Technology:** Plannar
领域和模块应用:
### Applicable fields and modules
1. **Power Management Module:** Due to its high drain-source voltage and low drain current, it is suitable for applications such as switching power supplies and DC-DC converters in power management modules. Its low threshold voltage and high gate-source resistance enable it to effectively control the output of a switching power supply.
2. **Lighting Applications:** In lighting applications such as LED lighting drivers, VBI165R01 can be used as a switching device with appropriate drain-source voltage and drain current, helping to achieve efficient energy conversion and precise brightness. adjust.
3. **Electric vehicle charging module:** The high drain-source voltage and moderate drain current of this product make it suitable for switching devices in electric vehicle charging modules, enabling effective charging and protection of the battery. .
4. **Industrial Automation:** In industrial automation equipment, VBI165R01 can be used as a switching device to realize motor drive, power switch and other control functions, with high reliability and stability.
The above is an introduction to the product VBI165R01, detailed parameter descriptions, and examples of applicable fields and modules in the form of paragraphs.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性