产品参数:
Product model: VBI1322
Brand: VBsemi
parameter:
- Unipolar N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (m次) at VGS=2.5V: 30
- Drain-source on-resistance (m次) at VGS=4.5V: 22
- Maximum drain current (ID): 6.8A
- Technology: Trench (groove type)
Package: SOT89
领域和模块应用:
for example:
1. **Power Management**: VBI1322 can be used as a switching tube in the power management module to adjust the output stability and efficiency of the power supply. Due to its medium power and low power consumption characteristics, it is suitable for compact space and high performance requirements of power management systems.
2. **Vehicle Electronics**: In vehicle electronic systems, VBI1322 can be used as a switch tube for the power control module in the vehicle circuit to control the power management and stability of vehicle electronic equipment. Its small package and low power consumption improve the performance and reliability of in-vehicle electronic systems.
3. **Industrial Control**: VBI1322 can be used as a switch tube for the motor control module in an industrial control system to control the start, stop and speed adjustment of industrial equipment. Due to its medium power and low power consumption characteristics, it is suitable for the compact space and high performance requirements of industrial control systems.
To sum up, the VBI1322 field effect transistor is suitable for medium power and current applications, such as power management, automotive electronics and industrial control applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性