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VBI1202K 产品详细

产品简介:

VBsemi VBI1202K is a single N-type field effect transistor product suitable for applications requiring low power and small size, including but not limited to low-power power modules, sensor interfaces, medical electronics and communication equipment, etc.

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产品参数:

has the following parameters:

- VDS (drain-source voltage): 200V
- VGS (gate-source voltage): ㊣20V
- Vth (gate threshold voltage): 3V
- Drain-source on-resistance at VGS=10V: 1600m次
- Maximum drain current (ID): 1A
- Technology type: Trench
-Package: SOT89

领域和模块应用:

This device is suitable for some specific fields and modules. The specific applications are as follows:

1. **Low power power module**: Due to the low drain current (1A) and high drain-source resistance of VBI1202K, it is suitable for use in low-power power modules, such as switching power supply modules for portable electronic equipment. Power bank, etc.

2. **Sensor interface**: In the sensor interface circuit, VBI1202K can be used as a switch controller to control the working status of sensors, such as temperature sensors, humidity sensors, etc.

3. **Medical Electronics**: Suitable for low-power medical electronic equipment, such as portable medical monitoring instruments, medical sensors, etc.

4. **Communication equipment**: Can be used for low-power communication equipment modules, such as radio frequency power amplifier control modules, low-power communication modules, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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