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VBI1201K 产品详细

产品简介:

The VBI1201K is a single N-channel MOSFET with a rated drain-source voltage of up to 200V and a drain current of 2A. Features include a standard gate-source voltage of ±20V, a threshold voltage of 3V and an 800m Ohm drain-source resistance. The device uses Trench technology and is packaged in SOT89.

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产品参数:

parameter:
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 200V
- Standard gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (miohms) at gate-source voltage 10V: 800
- Drain current (ID): 2A
- Technology: Trench
Package: SOT89

领域和模块应用:

for example:
1. Power management module: Since VBI1201K has a high rated voltage and low drain current, it is suitable for small power management modules, such as portable chargers and battery management systems. In portable chargers, it can be used as a power switching device in the charging circuit to achieve battery charging and current protection functions.
2. Electronic equipment: This MOSFET can be used in power switch modules in various electronic equipment, such as laptop computers and digital cameras. Its small package and low drain-source resistance make it a compact and efficient power switching device in electronic equipment.
3. LED driver: In LED lighting systems, VBI1201K can be used as a power switching device in the LED driver circuit to realize switching and brightness adjustment of LED lights. Its high voltage rating and low drain resistance ensure LED driver stability and reliability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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