VBGQT3401 is a dual N+N type field effect transistor designed for high power power conversion and driving applications. Its main parameters include:
- Rated drain-to-source voltage (VDS) is 40V, suitable for medium to high power applications.
- The maximum gate-source voltage (VGS) is 20V, providing a wide operating range.
- The threshold voltage (Vth) is 3V, suitable for high-voltage control circuits.
- The on-resistance at VGS=10V is 0.63mΩ, which has extremely low on-resistance and is suitable for high-power power conversion.
- Maximum drain current (ID) is 350A with high power handling capabilities.
- Using SGT technology, it has excellent electrical characteristics and reliability.

VBGQT3401 is suitable for high-power power conversion and drive applications, including electric vehicle battery management modules, industrial high-voltage power modules, solar inverter modules and other fields.