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VBGQT11505 产品详细

产品简介:

VBGQT11505 is a single-channel N-type MOS field effect transistor (Single N MOSFET), suitable for circuits up to 150V. Its gate-source voltage (VGS) is ±20V, threshold voltage (Vth) is 3.5V, drain-source on-resistance is 5mΩ at VGS=10V, and drain current (ID) is rated at 170A. Adopting SGT technology, it has excellent performance and reliability. The package form is TOLL, which is suitable for specific installation requirements.

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产品参数:

parameter:
- MOSFET type: Single N
- Rated drain-source voltage (VDS): 150V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source on-resistance (m次) at VGS=10V: 5
- Drain current (ID): 170A
- Technology: SGT (Single Gate Technology)
Package: TOLL

领域和模块应用:

**Application introduction and examples:**
1. **Electric vehicle motor control module:** VBGQT11505 is suitable for motor control modules of electric vehicles, such as motor drivers and inverters. Its high voltage and current characteristics can meet the power output and control requirements of electric vehicles, while the TOLL package facilitates compact layout in electric vehicle systems.

2. **Industrial high-voltage power module:** In the industrial field, VBGQT11505 can be used in high-voltage power modules, such as power inverters and DC-DC converters. Its high rated drain-source voltage and drain current can support the power conversion and control needs of industrial equipment, while the TOLL packaging form is conducive to heat dissipation and wiring.

3. **Solar power inverter module:** Solar power inverters need to handle high voltage and large current, and the parameters of VBGQT11505 meet these requirements. It can be used in solar power inverter modules to convert DC power generated by solar panels into AC power. The TOLL packaging form is suitable for installation in outdoor environments and can effectively dissipate heat to ensure the stable operation of the inverter.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

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