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VBGQT11202 产品详细

产品简介:

VBsemi VBGQT11202 is a unipolar N-type MOSFET with a maximum drain-source voltage of 120V and a maximum drain current of 230A. Its special gate structure (SGT) design allows it to perform in high voltage and high current environments Excellent. With a threshold voltage of 3V and a drain-to-source resistance of only 2mΩ at a gate voltage of 10V, it exhibits good turn-on characteristics.

VBsemi VBGQT11202's wide range of applications in industrial power supplies, electric vehicles, solar energy and industrial automation, and the role it plays in these applications.

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产品参数:

**parameter:**
- Unipolar N-type MOSFET
- Maximum drain-source voltage (VDS): 120V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 2
- Maximum drain current (ID): 230A
- Technology: SGT (Special Gate Structure)
- Package: TOLL

领域和模块应用:

**Application Introduction:**
1. **Industrial power module:** Since VBsemi VBGQT11202 has high drain-source voltage and current capability, it is suitable for use in circuits such as switching power supplies, inverters and converters in industrial power modules to provide reliable power switching function.

2. **Electric vehicle charging piles:** In electric vehicle charging piles, VBsemi VBGQT11202 can be used as a current switching device to control the power flow during battery charging and discharging to ensure the efficiency and safety of the charging process.

3. **Solar Inverter:** In solar inverter, VBsemi VBGQT11202 can be used as a switching tube to convert the DC power generated by the solar panel into AC power and supply it to the household or industrial power grid.

4. **Industrial automation equipment:** Due to its high voltage and high current characteristics, VBsemi VBGQT11202 can be used for functions such as motor control, current monitoring and power regulation in industrial automation equipment.

*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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