产品简介:
VBGQF1405 is a single N-type MOSFET with the following characteristics:
- Maximum drain voltage (VDS) is 40V, suitable for medium power applications.
- The maximum gate-source voltage (VGS) is ±20V, compatible with a variety of drive circuits.
- Threshold voltage (Vth) is 3V, with good switching characteristics.
- When VGS=4.5V, the on-resistance is 5.7mΩ; when VGS=10V, the on-resistance is 4.2mΩ, with low on-resistance and low switching loss.
- The maximum drain current (ID) is 60A and can withstand a certain current load.
- Using SGT technology, it has excellent performance and stability.
- The package is DFN8 (3X3), small in size, suitable for small circuit board layout and welding.
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领域和模块应用:
Application introduction:
1. **Power management module**: VBGQF1405 can be used as an active switching device for switching power supplies. It is suitable for low-power DC-DC converters, power inverters and other modules, providing efficient and stable energy conversion and power output.
2. **LED lighting control module**: As a switching device for LED drivers, VBGQF1405 can provide reliable switching control and circuit protection, and is suitable for driving modules of LED lamps, such as street lights, car lights, etc.
3. **Battery management module**: Combined with low threshold voltage and low on-resistance, VBGQF1405 can be used in battery management modules, such as battery protection boards for portable electronic devices, to achieve precise charge and discharge control and protection functions for batteries.
4. **Automotive electronic module**: In automotive electronic systems, VBGQF1405 can be used in vehicle power management modules, body control modules, etc., to provide efficient and reliable power conversion and control functions.
5. **Consumer Electronics**: Power management modules suitable for various types of consumer electronics, such as smartphones, tablets, etc., providing efficient and stable power output.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性