产品简介：
VBsemi's VBGQF1305 is a single-channel N-channel field effect transistor (Single N), manufactured using the SGT process. Its main parameters include: maximum drain-source voltage (VDS) of 30V, maximum gate-source voltage (VGS) is ±20V, the threshold voltage (Vth) is 1.7V, and the on-resistance at different gate-source voltages, etc. The device is packaged in DFN8 (3X3).
The device is suitable for use in electronic systems that require high performance and high reliability, such as modules in LED lighting, solar cells, and industrial control fields.
文件下载
领域和模块应用：
Application example:
1. **LED Lighting Module**: VBGQF1305’s low on-resistance and high voltage withstand capability make it ideal for use in drive circuits in LED lighting modules. For example, in LED light strips, it can be used as a current regulator to help achieve brightness adjustment and stable driving of LEDs.
2. **Solar Cell Module**: Since VBGQF1305 has a high maximum drain-source voltage and current tolerance, it is also very suitable for use in charge and discharge control circuits in solar cell modules. For example, in solar chargers, it can be used as a charge regulator to help manage and optimize the charge and discharge of solar cells.
3. **Industrial control module**: The high voltage withstand capability and high temperature resistance of this device make it widely used in industrial control modules. For example, in industrial automation, it can be used as a drive controller to help achieve precise control and efficient operation of various industrial equipment.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
立即下载
中文
English
返回上级页面.png)
