产品参数:
Detailed parameter description:
- Product type: Single N-channel field effect transistor (Single N-MOSFET)
- Maximum drain-source voltage (VDS): 150V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 5.7
- Maximum drain current (ID): 100A
- Technology: SGT (Silicon Gate Technology)
- Package: DFN8X8
领域和模块应用:
Has wide range of applications in the following areas and modules:
1. Power management module: VBGQE11506 is suitable for switching power supplies, DC-DC converters and chargers in the power management module. Its high drain-source voltage and current characteristics ensure stable and efficient operation of the module, while moderate threshold voltage and drain-source resistance improve conversion efficiency and reduce power consumption.
2. Automotive electronic modules: In the field of automotive electronics, VBGQE11506 can be used in modules such as vehicle power management, motor drive and lighting control. Its high voltage and current capabilities can meet the high power and high performance requirements of automotive electronic equipment, while the DFN8X8 package can meet the compact size and high-density integration requirements of automotive electronic modules.
3. Industrial automation module: In the field of industrial automation, VBGQE11506 can be used for power management, drive control and signal processing modules in industrial control systems. Its reliable performance and stable working characteristics make it an important part of industrial automation modules, improving the reliability and stability of the system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性