产品参数:
**Parameter Description:**
- Type: Dual N+dual N-channel field effect transistor (Dual N+N)
- Rated drain-source voltage (VDS): 60V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at VGS=4.5V: 13
- Drain-source resistance (m次) at VGS=10V: 10
- Maximum drain current (ID): 30A
- Technology: Single Groove Gate (SGT)
- Package: DFN8(5X6)-B
领域和模块应用:
**Application Introduction:**
VBGQA3610 is suitable for a variety of application scenarios, has high performance and stable characteristics, and is suitable for the following fields and modules:
1. Power management module: Since VBGQA3610 has a double N+double N structure, it is suitable for designing power management modules, such as power switches, voltage stabilizing modules and battery management modules, to provide stable power output in the fields of electronic equipment, communication equipment and industrial automation. and efficient energy conversion.
2. Power tool control module: This field effect transistor is suitable for designing control modules for power tools, such as power control modules for electric drills, electric hammers and electric saws. It provides efficient motor control and stable power supply for industrial production and Home use.
3. Vehicle electronic system module: VBGQA3610 can be used to design power management modules in vehicle electronic systems, such as vehicle power converters, electric vehicle controllers and vehicle charging piles, to provide stable power output and efficient energy conversion to meet automotive electrical requirements. system requirements.
4. Low-voltage DC power module: It is suitable for designing low-voltage DC power modules, such as power management modules for LED lighting drivers, industrial control systems and consumer electronics products. It has excellent performance in providing stable power output and efficient energy conversion.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性