产品参数:
Product model: VBGQA3402
Brand: VBsemi
parameter:
- Bipolar N+N channel field effect transistor (Dual N+N)
- Rated drain-source voltage (VDS): 40V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source on-resistance (m次) at VGS=4.5V: 3.3
- Drain-source on-resistance (m次) at VGS=10V: 2.2
- Maximum drain current (ID): 90A
- Technology: SGT
Package: DFN8(5X6)-B
领域和模块应用:
for example:
1. **Power Management**: VBGQA3402 can be used as a power switch tube in the power management module to adjust the output stability and efficiency of the power supply. Due to its bipolar characteristics, it can perform well in positive and negative current control and is suitable for high-efficiency output in power management systems.
2. **Wireless Communication**: In wireless communication systems, VBGQA3402 can be used as a switching tube of a radio frequency power amplifier to adjust the amplification and transmission of radio frequency signals. Its small package and high-power characteristics improve the performance and reliability of wireless communication systems.
3. **Industrial Driver**: VBGQA3402 can be used as a switch tube for the power control module in an industrial driver to control the start, stop and speed adjustment of industrial equipment. Due to its high power and low on-resistance characteristics, it is suitable for high-efficiency output of industrial drives.
To sum up, the VBGQA3402 field effect transistor is suitable for bipolar power control applications, such as power management, wireless communications and industrial drives.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性