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VBGQA3303G 产品详细

产品简介:

VBGQA3303G is a half-bridge N+N MOSFET with 30V drain-source voltage (VDS), 20V gate-source voltage (VGS), 1.7V threshold voltage (Vth), 3.5mΩ (VGS =4.5V) and 2.7mΩ (VGS=10V) on-resistance (RDS(on)), and a drain current (ID) of 75A. It is manufactured using SGT process and the package is DFN8(5X6)-C.

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产品参数:

Product model: VBGQA3303G
Brand: VBsemi
parameter:
- Half-bridge N+N type
- VDS(V): 30
- VGS(㊣V): 20
-Vth(V)ㄩ1.7
- RDS(on) VGS=4.5V(m次): 3.5
- RDS(on) VGS=10V(m次): 2.7
- ID (A): 75
- Technology: SGT
Package: DFN8(5X6)-C

领域和模块应用:

VBGQA3303G is suitable for various circuit designs and module applications that require half-bridge driving. For example,
In electric vehicle circuits, it can be used in half-bridge circuits in motor drivers; in industrial control systems, it can be used in fields such as motor controllers and power switch modules. It is characterized by high drain current and low on-resistance, suitable for high-power and high-efficiency circuit design requirements. In addition, the DFN8(5X6)-C package design is compact and suitable for applications with limited space.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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