产品参数:
VBsemi VBGQA3207N is a dual N-type field effect transistor product with the following parameters:
- VDS (drain-source voltage): 200V
- VGS (gate-source voltage): ㊣20V
- Vth (gate threshold voltage): 3V
- Drain-source on-resistance when VGS=10V: 70m次
- Maximum drain current (ID): 18A
- Technology type: SGT (Superjunction Gate Trench)
The package is DFN8(5x6)-B.
领域和模块应用:
This device is suitable for various fields and modules. The specific applications are as follows:
1. **Power module**: Since VBsemi VBGQA3207N has the characteristics of high drain voltage (200V) and large drain current (18A), it can be used in power modules, such as switching power supplies and DC-DC converters. Its low drain-to-source on-resistance (70mΩ) also contributes to efficiency.
2. **Motor Drive**: The double N-type structure and high drain current make this device have better performance in motor drive applications. For example, it can be used in electric vehicle motor driver modules to provide efficient electric vehicle power output.
3. **LED lighting**: The high voltage and high current characteristics of VBGQA3207N make it suitable for LED lighting driver modules, which can provide stable current output while ensuring high efficiency.
4. **Industrial Control**: In industrial automation control systems, this device can be used in switch controller modules, such as motor control, temperature control, etc., to achieve precise control and adjustment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性