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VBGQA2405 产品详细

产品简介:

VBGQA2405 is a high-performance single P-type field effect transistor (MOSFET) launched by VBsemi. The device features reliable drain-source and gate-source voltages, as well as low threshold voltage, making it suitable for a variety of power circuit designs. Made with SGT technology, it has good conduction characteristics and stability. DFN8 (5X6) package is suitable for small power circuits and has the characteristics of small space occupation and good heat dissipation performance.

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产品参数:

**Product model:** VBGQA2405
**Brand:** VBsemi
**parameter:**
- Power supply type: Single P
- Maximum drain-source voltage (VDS): -40V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (m次) at VGS=4.5V: 9
- Drain-source resistance (m次) at VGS=10V: 6.3
- Maximum drain current (ID): -80A
- Technology: SGT
**Package:** DFN8(5X6)

领域和模块应用:

**for example:**
1. Power management module: VBGQA2405 can be used for current control and power regulation in the power management module to ensure efficient and stable operation of the power system and reduce power loss.
2. LED lighting control module: Among the LED lighting control modules, VBGQA2405 is suitable for current adjustment and brightness control of LED lamps, providing stable lighting effects and energy saving.
3. Electric vehicle drive module: Since VBGQA2405 has high drain current and low drain-source resistance, it can be used for power amplification and current control in the electric vehicle drive module to improve the power performance and driving stability of electric vehicles. sex.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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