产品参数：
**VBsemi VBGQA2305**
**Brand:** VBsemi
**parameter:**
- **Single P:** Single P-type field effect transistor
- **VDS(V):** Drain-source voltage: -30V
- **VGS(㊣V):** Gate-source voltage range: ㊣20V
- **Vth(V):** Threshold voltage: -3V
- **VGS=4.5V(m次):** On-resistance when gate-source voltage is 4.5V: 7.4m次
- **VGS=10V(m次):** On-resistance when gate-source voltage is 10V: 5.1m次
- **ID (A):** Drain current: -90A
- **Technology:** Technology: SGT (Single Gate Technology)
**Package:**
- **DFN8(5X6):** 8-pin DFN package, size 5x6mm
领域和模块应用：
**Application examples:**
1. **Power Management Module:** The high drain current and low on-resistance of VBGQA2305 make it ideal for use in switching circuits in power management modules. For example, it can be used in switching tubes in power inverters to achieve efficient energy conversion and power control.
2. **Driver Circuit:** Due to its high drain current and wide range of gate-source voltage, VBGQA2305 can be used in power amplifiers and switching circuits in drive circuits. For example, it can be used in current control and power regulation functions in motor drive modules to improve motor performance and efficiency.
3. **Charge and discharge management module:** In the charge and discharge management module, VBGQA2305 can be used as a charging circuit or discharge protection device to achieve effective management and protection of batteries or supercapacitors. For example, in solar charging systems, it can be used to control the charging and discharging process between photovoltaic panels and batteries to ensure stable operation and long life of the system.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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