产品简介:
- **VDS(V):** The maximum voltage between drain and source. This parameter indicates the maximum voltage value that the device can withstand.
- **VGS(±V):** Gate-source voltage, that is, the voltage range between gate and source.
- **Vth(V):** Gate threshold voltage, that is, the voltage value at which the device begins to conduct.
- **VGS=4.5V(mΩ):** The on-resistance of the device at a given gate-source voltage.
- **VGS=10V(mΩ):** The on-resistance of the device at a given gate-source voltage.
- **ID (A):** Maximum drain current, which is the maximum current the device can withstand.
- **Technology:** Adopt SGT technology, that is, Silicon-Germanium Technology, which has better electrical conductivity and heat dissipation performance.
- **Package:** DFN8 (5X6), DFN8 is a low-profile, miniaturized packaging form suitable for high-density integrated circuit design.
Examples of application of VBGQA1405 products in different fields and modules. Its high performance and reliability make it an important part of various electronic equipment and industrial equipment, promoting technological development and application innovation in various fields.
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