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VBGQA1307 产品详细

产品简介:

VBGQA1307 is a Single N-type MOSFET, suitable for applications requiring higher drain voltage and current
- Made using Trench technology;
- Packaged as DFN8((5X6).

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产品参数:

MOSFET type: Single N
Rated drain-source voltage (VDS): 30V
Gate-source voltage (VGS): ㊣20V
Threshold voltage (Vth): 1.7V
Static working resistance (RDS(on)):
When VGS=4.5V: 9.5m次
When VGS=10V: 6.8m次
Rated drain current (ID): 40A
Technology: SGT
Package: DFN8(5X6)

领域和模块应用:

This product is suitable for applications requiring higher drain voltage and current, such as:

Power management module: used for power management modules such as switching power supplies and DC-DC converters to achieve efficient energy consumption and stable power output.
Motor drive module: used for DC motor control, electric vehicle control and other motor drive modules to achieve high-performance motor control and drive.
Power inverter module: used in power inverter modules such as solar inverters and electric vehicle inverters to achieve conversion and inversion of electrical energy.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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