产品参数:
parameter:
- MOSFET type: single N-channel
- Maximum drain-source voltage (VDS): 30V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (RDS(on)) at VGS=2.5V: 7.4m次
- Drain-source resistance (RDS(on)) at VGS=4.5V: 5.3m次
- Drain-source resistance (RDS(on)) at VGS=10V: 4.4m次
- Maximum drain current (ID): 45A
- Technology: SGT (Single Gate Trench)
-Package: DFN8(5X6)
领域和模块应用:
for example:
1. **Power Module**: The high drain current and low drain resistance of VBGQA1305 make it suitable for designing power modules with high efficiency and high power density. For example, it can be used in scenarios such as DC power supply, electric vehicle power management system and industrial power equipment to achieve fast and stable conversion and control of electric energy.
2. **Power Tool Module**: Because VBGQA1305 has high drain current and stable characteristics, it can be used to design various power tool modules, such as electric drills, electric saws, etc. Its low drain resistance and high power characteristics provide sufficient power output to meet the needs of industrial and home use.
3. **Electric vehicle drive module**: In the drive system of electric vehicles, VBGQA1305 can be used as a power switching device to control the start, stop and steering of the motor. Its high drain current and low drain resistance provide efficient power transfer, enabling high-performance and energy-saving operation of the vehicle.
4. **Solar Inverter Module**: VBGQA1305 is suitable for power switch control in solar inverter modules, which can realize the conversion and regulation of solar energy. Its stable characteristics and high power density make it an important component of solar power generation systems, improving system efficiency and stability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性